The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Aug. 15, 2014
Applicant:
The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US);
Inventors:
Yeul Na, Santa Clara, CA (US);
Krishna C Saraswat, Saratoga, CA (US);
Assignee:
Board of Regents, The University of Texas System, Austin, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/112 (2006.01); H01L 31/062 (2012.01); H01L 27/146 (2006.01); H01L 31/113 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1129 (2013.01); H01L 27/14612 (2013.01); H01L 27/14689 (2013.01); H01L 31/062 (2013.01); H01L 31/1136 (2013.01); Y02E 10/50 (2013.01);
Abstract
A depletion-mode phototransitor is disclosed. The phototransistor having a substrate, a gate, a source, a drain and a channel. The source, drain and channel are doped to be the same type of semiconductor. The substrate can be made of silicon and/or germanium. The gate can be made of either aluminum or polysilicon.