The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Jun. 27, 2013
Applicant:
University-industry Cooperation Group of Kyung Hee University, Yongin-si, Gyeonggi-do, KR;
Inventors:
Assignee:
UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY, Yongin-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/028 (2006.01); H01L 31/0392 (2006.01); H01L 31/0745 (2012.01);
U.S. Cl.
CPC ...
H01L 31/028 (2013.01); H01L 31/03921 (2013.01); H01L 31/0745 (2013.01); Y02E 10/547 (2013.01);
Abstract
Provided is a photodetector including a graphene p-n homogeneous vertical-junction diode by evaluating photodetection characteristics of the manufactured graphene p-n vertical junction according to the amount of doping. The photodetector comprises a substrate and graphene having a p-n homogeneous vertical junction as a photodetection layer formed on the substrate, wherein the photodetection layer has a detectability of 10E11 (Jones) or higher within the range of 350 nm to 1100 nm, and first and second electrodes are formed on the photodetection layer.