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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9343576 B1

PDFFull Text
Expired
Date of Patent:
May. 17, 2016

Filed:

Aug. 07, 2015

Thin film forming method, semiconductor substrate and electronic device produced by employing same

Applicant:

Hiroshima University, Hiroshima, JP;

Inventors:

Seiichiro Higashi, Hiroshima, JP;

Kohei Sakaike, Hiroshima, JP;

Yoshitaka Kobayashi, Hiroshima, JP;

Shogo Nakamura, Hiroshima, JP;

Muneki Akazawa, Hiroshima, JP;

Assignee:

Hiroshima University, Hiroshima, JP;

Attorney:

Renner, Otto, Boisselle & Sklar, LLP

Primary Examiner:

Hsien Ming Lee

Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/46 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 31/18 (2006.01); H01L 31/0445 (2014.01); H01L 21/762 (2006.01); H01L 21/20 (2006.01); H01L 31/0352 (2006.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 29/78603 (2013.01); H01L 21/2007 (2013.01); H01L 21/76251 (2013.01); H01L 27/1222 (2013.01); H01L 27/1266 (2013.01); H01L 29/66772 (2013.01); H01L 29/78654 (2013.01); H01L 31/03529 (2013.01); H01L 31/0445 (2014.12); H01L 31/068 (2013.01); H01L 31/0682 (2013.01); H01L 31/1804 (2013.01); H01L 31/1892 (2013.01); Y02E 10/547 (2013.01); Y10T 428/24331 (2015.01);
Abstract

The present invention provides a thin film forming method. The method includes the steps of: providing a first substrate, of which a surface is covered with a thin film; forming a plurality of openings through the thin film; forming a hollow portion between the first substrate and the thin film by etching the first substrate through the openings; bringing the thin film into contact with a second substrate with a liquid interposed between the thin film and the second substrate; and heating the first substrate and/or the second substrate. In the step of heating, the liquid interposed between the thin film and the second substrate evaporates off, which results in that the thin film is separated from the first substrate and transferred onto the second substrate.

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Higashi, Seiichiro. (2016). Thin film forming method, semiconductor substrate and electronic device produced by employing same (U.S. Patent No. 9343576). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9343576

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