The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Jan. 23, 2015
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Chung-Ren Lao, Taichung, TW;
Hsing-Chao Liu, Jhudong Township, TW;
Chu-Feng Chen, New Taipei, TW;
Wei-Chun Chou, New Taipei, TW;
Vangaurd International Semiconductor Corporation, Hsinchu, TW;
Abstract
A high-voltage semiconductor device is provided. The high-voltage semiconductor device includes a substrate; an epitaxial layer and a gate structure; a first conductive type first high-voltage well region and a second conductive type high-voltage well region disposed in the epitaxial layer at opposite sides of the gate structure respectively, wherein the first conductive type is different from the second conductive type; a source region and a drain region; and a stack structure disposed between the gate structure and the drain region, wherein the stack structure includes: a blocking layer; an insulating layer disposed over the blocking layer; and a conductive layer disposed over the insulating layer and electrically connected the source region or the gate structure. A method for manufacturing the high-voltage semiconductor device is also provided.