The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2016

Filed:

Feb. 07, 2013
Applicants:

Stmicroelectronics (Tours) Sas, Tours, FR;

Universite Francois Rabelais, Tours, FR;

Inventors:

Samuel Menard, Tours, FR;

Gaël Gautier, Veretz, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/74 (2006.01); H01L 29/747 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7424 (2013.01); H01L 29/0619 (2013.01); H01L 29/66386 (2013.01); H01L 29/747 (2013.01);
Abstract

A high-voltage vertical power component including a silicon substrate of a first conductivity type, and a first semiconductor layer of the second conductivity type extending into the silicon substrate from an upper surface of the silicon substrate, wherein the component periphery includes: a porous silicon ring extending into the silicon substrate from the upper surface to a depth deeper than the first layer; and a doped ring of the second conductivity type, extending from a lower surface of the silicon surface to the porous silicon ring.


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