The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Mar. 24, 2015
University of South Carolina, Columbia, SC (US);
Asif Khan, Irmo, SC (US);
Vinod Adivarahan, Columbia, SC (US);
University of South Carolina, Columbia, SC (US);
Abstract
MOSHFET devices are provided, along with their methods of fabrication. The MOSHFET device can include a substrate; a multilayer stack on the substrate; a ultra-thin barrier layer on the multilayer stack, wherein the ultra-thin barrier layer has a thickness of about 0.5 nm to about 10 nm; a dielectric, discontinuous thin film layer on portions of the ultra-thin barrier layer, wherein the dielectric, discontinuous thin film layer comprises SiO; a plurality of source electrodes and drain electrodes formed directly on the ultra-thin barrier layer in an alternating pattern such that the dielectric, discontinuous thin film layer is positioned between adjacent source electrodes and drain electrodes; a plurality of gate electrodes on the dielectric, discontinuous thin film layer; and a gate interconnect electrically connecting the plurality of gate electrodes.