The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2016

Filed:

Jun. 09, 2015
Applicant:

Olympus Corporation, Tokyo, JP;

Inventor:

Haruhisa Saito, Tokyo, JP;

Assignee:

OLYMPUS CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 27/146 (2006.01); H01L 25/065 (2006.01); H01L 23/48 (2006.01); H01L 21/48 (2006.01); H01L 21/50 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14634 (2013.01); H01L 21/48 (2013.01); H01L 21/50 (2013.01); H01L 21/78 (2013.01); H01L 23/48 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/27 (2013.01); H01L 24/83 (2013.01); H01L 24/89 (2013.01); H01L 24/92 (2013.01); H01L 24/94 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 27/1469 (2013.01); H01L 27/14636 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05568 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/08112 (2013.01); H01L 2224/08135 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/1148 (2013.01); H01L 2224/1184 (2013.01); H01L 2224/11452 (2013.01); H01L 2224/11472 (2013.01); H01L 2224/13013 (2013.01); H01L 2224/13017 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/1411 (2013.01); H01L 2224/16057 (2013.01); H01L 2224/16106 (2013.01); H01L 2224/27416 (2013.01); H01L 2224/27436 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/73104 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/8012 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/83193 (2013.01); H01L 2224/83194 (2013.01); H01L 2224/83855 (2013.01); H01L 2224/83856 (2013.01); H01L 2224/83862 (2013.01); H01L 2224/9211 (2013.01); H01L 2224/94 (2013.01); H01L 2225/06513 (2013.01); H01L 2924/12042 (2013.01);
Abstract

A semiconductor device manufacturing method includes a wafer stack manufacturing process and a dicing process. The wafer stack manufacturing process includes: a first wafer manufacturing process of manufacturing a resin film covering circuits and heated to a temperature higher than a glass transition point of the resin film, manufacturing first holes extending from a surface of the resin film to wirings of the circuits, and providing electrodes electrically connected to the wirings in the first holes to form a first wafer; a second wafer manufacturing process of manufacturing a resin film covering circuits and heated to a temperature lower than a glass transition point of the resin film, manufacturing second holes extending from a surface of the resin film to wirings of the circuits, and providing the electrodes electrically connected to the wirings in the second holes to form a second wafer; and a wafer bonding process.


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