The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2016

Filed:

Dec. 29, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Young-Gu Jin, Osan-si, KR;

Dong-Ki Min, Seoul, KR;

Hirosige Goto, Suwon-si, KR;

Tae-Chan Kim, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 27/146 (2006.01); H04N 9/04 (2006.01); H04N 13/02 (2006.01); H04N 5/3745 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14627 (2013.01); H01L 27/14609 (2013.01); H01L 27/14621 (2013.01); H01L 27/14629 (2013.01); H01L 27/14643 (2013.01); H01L 27/14665 (2013.01); H04N 5/3745 (2013.01); H04N 9/045 (2013.01); H04N 13/0207 (2013.01);
Abstract

Provided are a complementary metal-oxide semiconductor (CMOS) image sensor based on a thin-film-on-application specific integrated circuit (TFA), and a method of operating the same. The CMOS image sensor may include at least one floating diffusion region formed in a semiconductor substrate, and a thin film type light sensor disposed to correspond to a plurality of pixels. The CMOS image sensor may also include at least one via electrically connected between the light sensor and the at least one floating diffusion region. The CMOS image sensor may also include a first micro lens disposed to correspond to at least two pixels of the plurality of pixels.


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