The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2016

Filed:

Sep. 17, 2014
Applicant:

Panasonic Corporation, Oaza Kadoma, Kadoma-shi, Osaka, JP;

Inventors:

Hiroyuki Shimbo, Kyoto, JP;

Masaki Tamaru, Kyoto, JP;

Assignee:

SOCIONEXT INC., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 27/02 (2006.01); H01L 23/538 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0928 (2013.01); H01L 21/823871 (2013.01); H01L 23/5386 (2013.01); H01L 27/0207 (2013.01); H01L 29/4232 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device has first conductivity type regions extending in a first direction, and second conductivity type regions extending in the first direction. The first conductivity type regions and the second conductivity type regions are alternately arranged in a second direction perpendicular to the first direction. The semiconductor device includes a first impurity diffused regions formed in the first conductivity type regions, a first local wiring connected to the first conductivity type regions, and extending in the second direction, a first potential supply wiring formed above the first local wiring, and extending in the first direction, and a first contact hole for connecting the first local wiring to the first potential supply wiring.


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