The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2016

Filed:

May. 15, 2015
Applicant:

Renesas Electronics Corporation, Kanagawa, JP;

Inventors:

Ryo Kanda, Kanagawa, JP;

Tetsu Toda, Kanagawa, JP;

Yasushi Nakahara, Kanagawa, JP;

Yoshinori Kaya, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/76 (2006.01); H01L 29/78 (2006.01); H01L 27/02 (2006.01); H01L 29/40 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 29/0653 (2013.01); H01L 29/1095 (2013.01); H01L 29/402 (2013.01); H01L 29/404 (2013.01); H01L 29/7816 (2013.01);
Abstract

A field plate electrode is repetitively disposed in a folded manner or a spiral shape in a direction along an edge of a first circuit region. A coupling transistor couples a first circuit to a second circuit lower in supply voltage than the first circuit. A second conductivity type region is disposed around the coupling transistor. A part of the field plate electrode partially overlaps with the second conductivity type region. The field plate electrode is electrically coupled to a drain electrode of the coupling transistor at a portion located on the first circuit region side from a center thereof in a width direction of the separation region. A ground potential or a power potential of the second circuit is applied to the field plate electrode at a portion located on the second conductivity type region side from the center.


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