The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2016

Filed:

Jun. 24, 2013
Applicant:

Renesas Electronics Corporation, Kanagawa, JP;

Inventors:

Hisao Shigihara, Kanagawa, JP;

Hiromi Shigihara, Kanagawa, JP;

Akira Yajima, Kanagawa, JP;

Hiroshi Tsukamoto, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/525 (2006.01); H01L 23/532 (2006.01); H01L 23/00 (2006.01); H01L 23/495 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49811 (2013.01); H01L 21/4885 (2013.01); H01L 23/525 (2013.01); H01L 23/53238 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 23/3192 (2013.01); H01L 23/4952 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 24/85 (2013.01); H01L 24/94 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/02373 (2013.01); H01L 2224/02377 (2013.01); H01L 2224/02379 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/0361 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03474 (2013.01); H01L 2224/03914 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05084 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05664 (2013.01); H01L 2224/06135 (2013.01); H01L 2224/06138 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/16245 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48463 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/48644 (2013.01); H01L 2224/48664 (2013.01); H01L 2224/48844 (2013.01); H01L 2224/48864 (2013.01); H01L 2224/85181 (2013.01); H01L 2224/94 (2013.01); H01L 2924/00 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/181 (2013.01);
Abstract

To provide a semiconductor device having improved reliability by improving a coupling property between a semiconductor chip and a bonding wire. A redistribution layer is comprised of a Cu film, an Ni film, and a Pd film which have been formed successively from the side of a semiconductor substrate. The Pd film on the uppermost surface is used as an electrode pad and a bonding wire made of Cu is coupled to the upper surface of the Pd film. The thickness of the Pd film is made smaller than that of the Ni film and the thickness of the Ni film is made smaller than that of the Cu film. The Cu film, the Ni film, and the Pd film have the same pattern shape in a plan view.


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