The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2016

Filed:

Dec. 15, 2014
Applicant:

Industrial Technology Research Institute, Hsinchu, TW;

Inventors:

Peng-Shu Chen, New Taipei, TW;

Shih-Hsien Wu, Yangmei, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/64 (2006.01); H01L 23/522 (2006.01); H01L 21/02 (2006.01); H01L 23/498 (2006.01); H01L 23/66 (2006.01); H01L 25/065 (2006.01); H01L 23/14 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/02107 (2013.01); H01L 23/49827 (2013.01); H01L 23/5223 (2013.01); H01L 23/5228 (2013.01); H01L 23/64 (2013.01); H01L 23/66 (2013.01); H01L 25/0657 (2013.01); H01L 23/147 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05009 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/81192 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/19015 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19043 (2013.01); H01L 2924/19104 (2013.01); H01L 2924/3011 (2013.01);
Abstract

A semiconductor substrate assembly includes a semiconductor material layer, a first isolation layer, a second isolation layer, a first conductive pillar, and a second conductive pillar. The semiconductor material layer has a first surface and a second surface opposite to the first surface. The first isolation layer is located on the first surface of the semiconductor material layer. The second isolation layer is located on the second surface of the semiconductor material layer. The first conductive pillar, supplied with a first voltage, penetrates the semiconductor material layer, the first isolation layer, and the second isolation layer. The second conductive pillar is supplied with to a second voltage, and a part of the second conductive pillar is formed in the second isolation layer, the second conductive pillar penetrates the second isolation layer and touches the second surface of the semiconductor material layer.


Find Patent Forward Citations

Loading…