The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Jan. 25, 2012
Mamoru Terai, Tokyo, JP;
Tatsuo Ota, Tokyo, JP;
Hiroya Ikuta, Tokyo, JP;
Kenichi Hayashi, Tokyo, JP;
Takashi Nishimura, Tokyo, JP;
Toshiaki Shinohara, Tokyo, JP;
Mamoru Terai, Tokyo, JP;
Tatsuo Ota, Tokyo, JP;
Hiroya Ikuta, Tokyo, JP;
Kenichi Hayashi, Tokyo, JP;
Takashi Nishimura, Tokyo, JP;
Toshiaki Shinohara, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A power semiconductor device is provided with a semiconductor-element substrate in which a front-surface electrode pattern is formed on a surface of an insulating substrate; semiconductor elements for electric power which are affixed to the surface of the front-surface electrode pattern; a partition wall which is provided on the front-surface electrode pattern so as to enclose the semiconductor elements for electric power; a first sealing resin member which is filled inside the partition wall; a second sealing resin member which covers the first sealing resin member and a part of the semiconductor-element substrate which is exposed from the partition wall, wherein an electrode for a relay terminal is provided on a surface of the partition wall, and a wiring from inside of the partition wall to outside of the partition wall is led out via the electrode for a relay terminal.