The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Nov. 07, 2014
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Kunihiro Sato, Tokyo, JP;
Shin Chaki, Tokyo, JP;
Takashi Yamasaki, Tokyo, JP;
Takaaki Yoshioka, Tokyo, JP;
Assignee:
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 19/00 (2006.01); H03F 3/68 (2006.01); H01L 21/66 (2006.01); H03F 3/19 (2006.01); H03F 3/24 (2006.01);
U.S. Cl.
CPC ...
H01L 22/14 (2013.01); H01L 22/32 (2013.01); H03F 3/19 (2013.01); H03F 3/24 (2013.01); H03F 2200/451 (2013.01);
Abstract
A high-frequency power amplifier includes: a semiconductor substrate; transistor cells separated from each other and located on the semiconductor substrate; and testing electrodes respectively connected to individual transistor cells, wherein an electrical signal and power to individually operate each corresponding transistor cell are supplied to each transistor cell, independently, from outside, using the testing electrodes.