The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Nov. 28, 2014
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Dong-Seok Lee, Incheon, KR;
Kang-Ill Seo, Chungcheongbuk-do, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Abstract
An exemplary method of fabricating a semiconductor device is provided. First and second hard mask patterns adjacent to each other are formed on a substrate. First and second active fins are formed by etching the substrate using the first and second hard mask patterns as a etch mask. An isolation layer is formed to fill a region defined by the first and second active fins and the first and second hard mask patterns. A mask pattern is formed to be positioned on the first hard mask pattern and overlap the first active fin. A first trench is formed by etching a portion of the isolation layer and a portion of the second active fin using the mask pattern as an etch mask. The remaining portion of the second active fin is removed by performing an isotropic etching process.