The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Jan. 30, 2015
Applicant:
SK Hynix Inc., Icheon, KR;
Inventor:
Byung Wook Bae, Icheon, KR;
Assignee:
SK HYNIX INC., Icheon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 23/14 (2006.01); H01L 23/498 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/308 (2013.01); H01L 21/486 (2013.01); H01L 21/7684 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 23/147 (2013.01); H01L 23/49827 (2013.01); H01L 23/5384 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate having two surfaces. First side faces second side and includes recesses, and a plurality of through silicon vias (TSV), which penetrate through the semiconductor substrate, are exposed by the recesses. Even when the TSVs have different heights from each other or the degree of back-grinding is changed, due to a process parameters, yield of the semiconductor device is improved by reducing failure caused when a TSV is not exposed.