The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2016

Filed:

Sep. 02, 2014
Applicant:

Newport Fab, Llc, Newport Beach, CA (US);

Inventors:

Paul D. Hurwitz, Irvine, CA (US);

Robert L. Zwingman, Walnut, CA (US);

Assignee:

Newport Fab, LLC, Newport Beach, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/764 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/764 (2013.01); H01L 21/02356 (2013.01); H01L 21/306 (2013.01); H01L 21/7624 (2013.01); H01L 21/76237 (2013.01);
Abstract

Disclosed is a structure for improved electrical signal isolation between adjacent devices situated in a top semiconductor layer of the structure and an associated method for the structure's fabrication. The structure comprises a first portion of a trench extending through the top semiconductor layer and through a base oxide layer below the top semiconductor layer. A handle wafer is situated below the base oxide layer and a second portion of the trench, having sloped sidewalls, extends into the handle wafer. The sloped sidewalls are amorphized by an implant, for example, Xenon or Argon, to reduce carrier mobility in the handle wafer and improve electrical signal isolation between the adjacent devices situated in the top semiconductor layer.


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