The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Mar. 11, 2015
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Assignee:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32136 (2013.01); H01L 21/3065 (2013.01); H01L 21/30655 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01);
Abstract
A method of manufacturing a semiconductor device provided with a stack of a first film substantially free of oxygen and a second film disposed above the first film and comprising a metal oxide containing an uneasily etched material is disclosed. The method includes etching the second film by a first process using a first etch gas containing a boron trichloride containing gas and by a second process following the first process using a second etch gas containing an inert gas. In the second process, the second etch gas is used while a bias power is controlled to be equal to or greater than an etching threshold energy of the second film.