The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Feb. 06, 2015
Applicant:
Saint-gobain Ceramics & Plastics, Inc., Worcester, MA (US);
Inventors:
Jun Wang, Shrewsbury, MA (US);
Ronald W. Laconto, Leicester, TX (US);
Andrew G. Haerle, Sutton, MA (US);
Assignee:
SAINT-GOBAIN CERMAICS & PLASTICS, INC., Worcester, MA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C03C 15/00 (2006.01); C03C 25/68 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/306 (2006.01); B24B 37/00 (2012.01); C09G 1/02 (2006.01); C09K 3/14 (2006.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30625 (2013.01); B24B 37/00 (2013.01); C09G 1/02 (2013.01); C09K 3/1409 (2013.01); C09K 3/1463 (2013.01); H01L 21/02024 (2013.01); H01L 29/1608 (2013.01);
Abstract
A method for chemical mechanical polishing of a substrate includes polishing the substrate at a stock removal rate of greater than about 2.5 Å/min to achieve a Ra of not greater than about 5.0 Å. The substrate can be a III-V substrate or a SiC substrate. The polishing utilizes a chemical mechanical polishing slurry comprising ultra-dispersed diamonds and at least 80 wt % water.