The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2016

Filed:

Nov. 03, 2014
Applicant:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Inventors:

Shien Cho, Kanagawa, JP;

Takahiro Hara, Ibaraki, JP;

Kenichi Ito, Ibaraki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/285 (2006.01); G01N 25/48 (2006.01); G01N 5/04 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28556 (2013.01); G01N 5/04 (2013.01); G01N 25/4846 (2013.01); H01L 22/12 (2013.01); H01L 21/28202 (2013.01);
Abstract

First, a product to be inspected is prepared. The product to be inspected includes a substrate and a first film formed on the substrate. TDS is performed while the temperature of the product to be inspected is raised to 1,000° C. or higher, and the quality of the product to be inspected is determined by checking for the presence or absence of a peak at 1,000° C. or higher. Meanwhile, the substrate is, for example, a semiconductor substrate such as a silicon substrate. In addition, the rate of temperature rise is, for example, equal to or higher than 40° C./min and equal to or lower than 80° C./min. The upper limit of the temperature of TDS is, for example, 1,300° C.


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