The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2016

Filed:

Aug. 20, 2014
Applicants:

Ziyu Guo, Tianjin, CN;

Xiangming Kong, Tianjin, CN;

Shayan Zhang, Austin, TX (US);

Inventors:

Ziyu Guo, Tianjin, CN;

Xiangming Kong, Tianjin, CN;

Shayan Zhang, Austin, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/50 (2006.01); G11C 29/52 (2006.01); G06F 1/32 (2006.01); G11C 5/14 (2006.01); G11C 11/417 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50016 (2013.01); G06F 1/3275 (2013.01); G06F 1/3296 (2013.01); G11C 5/147 (2013.01); G11C 11/417 (2013.01); G11C 29/50004 (2013.01); G11C 29/52 (2013.01); G11C 2029/0409 (2013.01);
Abstract

A controller for a memory device has a power control section to control power to a memory element in an operation mode and in a retention mode. A monitoring section receives and monitors error information and a storage section stores a retention parameter. In the operation mode, the power control section causes an operation voltage to be applied to the memory element, and in the retention mode, the power control section causes a time-varying voltage to be applied to the memory. The power control section also causes the voltage across the memory element to change in the retention mode between a first retention voltage and a second retention voltage based on the retention parameter.


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