The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Nov. 05, 2013
Physically unclonable function based on programming voltage of magnetoresistive random-access memory
Qualcomm Incorporated, San Diego, CA (US);
Xiaochun Zhu, San Diego, CA (US);
Steven M. Millendorf, San Diego, CA (US);
Xu Guo, San Diego, CA (US);
David M. Jacobson, San Diego, CA (US);
Kangho Lee, San Diego, CA (US);
Seung H. Kang, San Diego, CA (US);
Matthew Michael Nowak, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
One feature pertains to a method of implementing a physically unclonable function. The method includes initializing an array of magnetoresistive random-access memory (MRAM) cells to a first logical state, where each of the MRAM cells have a random transition voltage that is greater than a first voltage and less than a second voltage. The transition voltage represents a voltage level that causes the MRAM cells to transition from the first logical state to a second logical state. The method further includes applying a programming signal voltage to each of the MRAM cells of the array to cause at least a portion of the MRAM cells of the array to randomly change state from the first logical state to the second logical state, where the programming signal voltage is greater than the first voltage and less than the second voltage.