The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Mar. 14, 2013
Applicant:
Nec Corporation, Tokyo, JP;
Inventors:
Junichi Fujikata, Tokyo, JP;
Shigeki Takahashi, Tokyo, JP;
Assignee:
NEC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/035 (2006.01); G02F 1/025 (2006.01); G02F 1/225 (2006.01); G02F 1/015 (2006.01); G02F 1/21 (2006.01);
U.S. Cl.
CPC ...
G02F 1/025 (2013.01); G02F 1/225 (2013.01); G02F 1/2257 (2013.01); G02F 2001/0152 (2013.01); G02F 2001/212 (2013.01); G02F 2202/104 (2013.01);
Abstract
In a region in which silicon semiconductor layers having first and second conductive types are stacked, a concavoconvex structure including a SiGe(x=0.01 to 0.9) layer is formed on a surface of the first silicon semiconductor layer, a relatively thin dielectric is formed on the concavoconvex structure, and a silicon semiconductor layer having the second conductive type is further stacked.