The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2016

Filed:

Feb. 24, 2014
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Shunpei Yamazaki, Setagaya, JP;

Kengo Akimoto, Tochigi, JP;

Hironobu Takahashi, Oyama, JP;

Hiroshi Kanemura, Tochigi, JP;

Akiharu Miyanaga, Hadano, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01T 1/20 (2006.01); G01T 1/202 (2006.01);
U.S. Cl.
CPC ...
G01T 1/2018 (2013.01);
Abstract

An imaging device which is highly stable to irradiation with radiations such as X-rays and can inhibit a decrease in electrical characteristics is provided. The imaging device obtains an image using radiations such as X-rays and includes pixel circuits which are arranged in a matrix and which a scintillator overlaps. Each of the pixel circuits includes a switching transistor whose off-state current is extremely low and a light-receiving element. A shielding layer formed using a metal material and the like overlaps the transistor and the light-receiving element. With the structure, an imaging device which is highly stable to irradiation with radiations such as X-rays and can inhibit a decrease in electrical characteristics can be provided.


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