The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Jan. 19, 2012
Tokuyuki Nakayama, Ichikawa, JP;
Tokuyuki Nakayama, Ichikawa, JP;
SUMITOMO METAL MINING CO., LTD., Tokyo, JP;
Abstract
The present invention discloses a tablet for ion plating, which is capable of providing high speed film formation of a transparent conductive film suitable for a solar cell, and continuing film formation without generating crack, fracture or splash; and an oxide sintered body for obtaining the same. The oxide sintered body etc. comprising indium oxide as a main component, and tungsten as an additive element, content of tungsten being 0.001 to 0.15, as an atomic ratio of W/(In+W), characterized in that said oxide sintered body is mainly composed of a crystal grain (A) composed of the indium oxide phase with a bixbyite type structure, where tungsten does not make a solid solution, and a crystal grain (B) composed of the indium oxide phase with a bixbyite type structure, where tungsten does not make a solid solution, and has a density of 3.4 to 5.5 g/cm.