The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
May. 29, 2014
Applicants:
Lee William Tutt, Webster, NY (US);
Shelby Forrester Nelson, Pittsford, NY (US);
Inventors:
Lee William Tutt, Webster, NY (US);
Shelby Forrester Nelson, Pittsford, NY (US);
Assignee:
EASTMAN KODAK COMPANY, Rochester, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01); H01L 21/8242 (2006.01); H01L 21/8224 (2006.01); H03K 17/687 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H03K 17/687 (2013.01); H01L 29/66787 (2013.01); H01L 29/78642 (2013.01); H01L 29/7869 (2013.01); H01L 29/78681 (2013.01);
Abstract
A transistor includes a substrate, an electrically conductive material layer, and an electrically insulating material layer. At least a portion of one or more of the substrate, the electrically conductive material layer, and the electrically insulating material layer define a reentrant profile.
Tutt, Lee. (2016). Transistor including reentrant profile (U.S. Patent No. 9337828). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9337828
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile