The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2016

Filed:

Jun. 13, 2014
Applicant:

Rf Micro Devices, Inc., Greensboro, NC (US);

Inventors:

Derek Schooley, Oak Ridge, NC (US);

Alexander Wayne Hietala, Phoenix, AZ (US);

Assignee:

RF Micro Devices, Inc., Greensboro, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03G 3/30 (2006.01); H03F 3/21 (2006.01); H03F 1/02 (2006.01); H03F 3/191 (2006.01);
U.S. Cl.
CPC ...
H03F 3/21 (2013.01); H03F 1/0261 (2013.01); H03F 3/191 (2013.01); H03F 2200/18 (2013.01); H03F 2200/27 (2013.01); H03F 2200/451 (2013.01); H03G 3/30 (2013.01);
Abstract

Power amplifier circuitry includes a power amplifier including an input node and an output node, biasing circuitry, a selectable impedance network, and an input capacitor. The input capacitor is coupled to the input node of the power amplifier. The biasing circuitry is coupled to the input node of the power amplifier through the selectable impedance network. The power amplifier is operable in a low power operating mode and a high power operating mode. In the low power operating mode, the biasing circuitry delivers a first biasing current to the input node of the power amplifier, and a first impedance level of the selectable impedance is selected. In the high power operating mode, the biasing circuitry delivers a second biasing current to the input node of the power amplifier, and a second impedance level of the selectable impedance is selected.


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