The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Aug. 15, 2012
Toshihiko Takeuchi, Kanagawa, JP;
Minoru Takahashi, Nagano, JP;
Takeshi Osada, Kanagawa, JP;
Teppei Oguni, Kanagawa, JP;
Kazuki Tanemura, Kanagawa, JP;
Toshihiko Takeuchi, Kanagawa, JP;
Minoru Takahashi, Nagano, JP;
Takeshi Osada, Kanagawa, JP;
Teppei Oguni, Kanagawa, JP;
Kazuki Tanemura, Kanagawa, JP;
Semiconductor Energy Laboratory Co., LTD., Kanagawa-ken, JP;
Abstract
A power storage device in which silicon is used as a negative electrode active material layer and which can have an improved performance such as higher discharge capacity, and a method for manufacturing the power storage device are provided. A power storage device includes a current collector and a silicon layer having a function as an active material layer over the current collector. The silicon layer includes a thin film portion in contact with the current collector, a plurality of bases, and a plurality of whisker-like protrusions extending from the plurality of bases. A protrusion extending from one of the plurality of bases is partly combined with a protrusion extending from another one of the plurality of bases.