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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9337391 B1

PDFFull Text
Date of Patent:
May. 10, 2016

Filed:

Mar. 18, 2015

Semiconductor light emitting device, light emitting device package comprising the same, and lighting device comprising the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Jai Won Jean, Seoul, KR;

Min Hwan Kim, Anyang-si, KR;

Eun Deok Sim, Yongin-si, KR;

Jong Hyun Lee, Suwon-si, KR;

Heon Ho Lee, Seongnam-si, KR;

Ho Chul Lee, Seongnam-si, KR;

Jae Sung Hyun, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Douglas Menz

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01); H01L 33/06 (2010.01); H01L 33/14 (2010.01); H01L 33/50 (2010.01); H01L 33/24 (2010.01); H01L 33/46 (2010.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
H01L 33/325 (2013.01); H01L 33/0025 (2013.01); H01L 33/025 (2013.01); H01L 33/06 (2013.01); H01L 33/14 (2013.01); H01L 33/24 (2013.01); H01L 33/46 (2013.01); H01L 33/502 (2013.01); B82Y 20/00 (2013.01); Y10S 977/95 (2013.01);
Abstract

A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlInGaN (0≦x≦0.1, 0.01≦y≦0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer.

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