The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Dec. 19, 2013
Applicant:
Panasonic Intellectual Property Management Co., Ltd., Osaka-shi, Osaka, JP;
Inventors:
Akiyoshi Ogane, Osaka, JP;
Yasufumi Tsunomura, Hyogo, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0747 (2012.01); H01L 31/075 (2012.01); H01L 31/0376 (2006.01);
U.S. Cl.
CPC ...
H01L 31/075 (2013.01); H01L 31/03762 (2013.01); H01L 31/0747 (2013.01); Y02E 10/547 (2013.01); Y02E 10/548 (2013.01);
Abstract
A photovoltaic device may be provided having a semiconductor substrate, an i-type amorphous layer or an i-type amorphous layer formed over a front surface or a back surface of the semiconductor substrate, and a p-type amorphous layer or an n-type amorphous layer formed over the i-type amorphous layer or the i-type amorphous layer. The i-type amorphous layer or the i-type amorphous layer has an oxygen concentration profile in which a concentration is reduced in a step-shape from a region near an interface with the semiconductor substrate and along a thickness direction.