The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Jun. 23, 2011
Applicants:
Peter Cuony, Neuchatel, CH;
Matthieu Despeisse, Neuchatel, CH;
Christophe Ballif, Neuchatel, CH;
Gaetano Parascandolo, Prilly, CH;
Inventors:
Peter Cuony, Neuchatel, CH;
Matthieu Despeisse, Neuchatel, CH;
Christophe Ballif, Neuchatel, CH;
Gaetano Parascandolo, Prilly, CH;
Assignee:
ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE, Lausanne, CH;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/0236 (2006.01); H01L 31/0368 (2006.01); H01L 31/076 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02363 (2013.01); H01L 31/0236 (2013.01); H01L 31/03687 (2013.01); H01L 31/076 (2013.01); H01L 31/1816 (2013.01); H01L 31/1824 (2013.01); Y02E 10/548 (2013.01);
Abstract
A multiple-junction photoelectric device includes sequentially, a substrate, a first conducting layer, at least two elementary photoelectric devices, at least one of the elementary photoelectric devices being made of microcrystalline silicon, and a second conducting layer. The first conducting layer has a surface facing the microcrystalline silicon elementary photoelectric device such that the surface: