The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2016

Filed:

Nov. 11, 2010
Applicants:

Michael W. Wiemer, Campbell, CA (US);

Homan B. Yuen, Sunnyvale, CA (US);

Vijit A. Sabnis, Cupertino, CA (US);

Ting Liu, Santa Clara, CA (US);

Pranob Misra, Milpitas, CA (US);

Michael J. Sheldon, San Jose, CA (US);

Onur Fidaner, Stanford, CA (US);

Inventors:

Michael W. Wiemer, Campbell, CA (US);

Homan B. Yuen, Sunnyvale, CA (US);

Vijit A. Sabnis, Cupertino, CA (US);

Ting Liu, Santa Clara, CA (US);

Pranob Misra, Milpitas, CA (US);

Michael J. Sheldon, San Jose, CA (US);

Onur Fidaner, Stanford, CA (US);

Assignee:

Solar Junction Corporation, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/0224 (2006.01); H01L 31/0725 (2012.01); H01L 31/0735 (2012.01);
U.S. Cl.
CPC ...
H01L 31/022425 (2013.01); H01L 31/022433 (2013.01); H01L 31/0725 (2013.01); H01L 31/0735 (2013.01);
Abstract

A multi junction solar cell is provided with a non-alloyed ohmic contact metallization stack by inversion of the top semiconductor layer from n-type to p-type and including the utilization of a tunnel junction. Alternatively, the non-alloyed ohmic contact can be achieved by changing the top semiconductor layer from a higher bandgap material to a lower bandgap material.


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