The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
May. 23, 2013
Applicant:
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/8605 (2006.01); H01C 7/112 (2006.01); H01C 7/18 (2006.01); H01C 1/14 (2006.01); H01C 7/10 (2006.01); H01L 27/02 (2006.01); H01L 29/22 (2006.01); H01C 1/148 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8605 (2013.01); H01C 1/14 (2013.01); H01C 7/10 (2013.01); H01C 7/112 (2013.01); H01C 7/18 (2013.01); H01L 27/0248 (2013.01); H01L 29/22 (2013.01); H01C 1/148 (2013.01); H01L 27/0288 (2013.01);
Abstract
A voltage nonlinear resistor includes a plurality of N-type ZnO crystal grains, a grain boundary layer, and an oxide grain as a P-type semiconductor. The grain boundary layer is formed between the ZnO crystal grains, and contains at least one kind of oxide of alkaline-earth metal. The oxide grain is disposed between the ZnO crystal grains via the grain boundary layer.