The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Jun. 03, 2015
Applicant:
Japan Display Inc., Minato-ku, JP;
Inventors:
Assignee:
JAPAN DISPLAY INC., Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/49 (2006.01); H01L 21/02 (2006.01); H01L 21/465 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66969 (2013.01); H01L 21/0262 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02214 (2013.01); H01L 21/02271 (2013.01); H01L 21/02565 (2013.01); H01L 21/465 (2013.01); H01L 29/4908 (2013.01); H01L 29/7869 (2013.01);
Abstract
According to one embodiment, a thin-film transistor comprises an oxide semiconductor layer formed on a part of a substrate, a first gate insulator film of a silicon dioxide film formed on the oxide semiconductor layer and by the CVD method with a silane-based source gas, a second gate insulator film of a silicon dioxide film formed on the first gate insulator film by the CVD method with a TEOS source gas, and a gate electrode formed on the second gate insulator film.