The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Mar. 17, 2014
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Masahiko Kuraguchi, Kanagawa, JP;
Akira Yoshioka, Ishikawa, JP;
Miki Yumoto, Kanagawa, JP;
Hisashi Saito, Kanagawa, JP;
Kohei Oasa, Ishikawa, JP;
Toru Sugiyama, Ishikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device according to an embodiment includes a nitride semiconductor layer, a gate electrode provided above the nitride semiconductor layer, a source electrode provided above the nitride semiconductor layer, a drain electrode provided above the nitride semiconductor layer at a side opposite to the source electrode with respect to the gate electrode, a first silicon nitride film provided above the nitride semiconductor layer between the drain electrode and the gate electrode, and a second silicon nitride film provided between the nitride semiconductor layer and the gate electrode, an atomic ratio of silicon to nitrogen in the second silicon nitride film being lower than an atomic ratio of silicon to nitrogen in the first silicon nitride film.