The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
May. 12, 2015
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Toshiyuki Tani, Hayami-Gun, JP;
Akihiko Yamashita, Oita, JP;
Motoaki Kusamaki, Beppu, JP;
Kentaro Takahashi, Tokyo, JP;
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/861 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 27/02 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66121 (2013.01); H01L 21/76224 (2013.01); H01L 27/0255 (2013.01); H01L 27/0262 (2013.01); H01L 29/6609 (2013.01); H01L 29/861 (2013.01); H01L 29/8618 (2013.01); H01L 29/0649 (2013.01); H01L 29/66136 (2013.01);
Abstract
A bi-directional electrostatic discharge diode structure consumes substantially less silicon real estate and provides ultra-low capacitance by utilizing a p− epitaxial layer that touches and lies between an n+ lower epitaxial layer and an n+ upper epitaxial layer. A metal contact touches and lies over a p+ layer, which touches and lies over the n+ upper epitaxial layer.