The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Jun. 06, 2013
Denso Corporation, Kariya, Aichi-pref., JP;
Kazumi Chida, Toyota-shi, Aichi-ken, JP;
Yuichi Takeuchi, Obu, JP;
Kazumi Chida, Nissin, JP;
Narumasa Soejima, Seto, JP;
Yukihiko Watanabe, Nagoya, JP;
DENSO CORPORATION, Kariya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota-shi, JP;
Abstract
In a method for producing an SiC semiconductor device, a p type layer is formed in a trench by epitaxially growing, and is then left only on a bottom portion and ends of the trench by hydrogen etching, thereby to form a p type SiC layer. Thus, the p type SiC layer can be formed without depending on diagonal ion implantation. Since it is not necessary to separately perform the diagonal ion implantation, it is less likely that a production process will be complicated due to transferring into an ion implantation apparatus, and thus manufacturing costs reduce. Since there is no damage due to a defect caused by the ion implantation, it is possible to reduce a drain leakage and to reliably restrict the p type SiC layer from remaining on the side surface of the trench.