The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Mar. 12, 2014
Applicant:
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Inventors:
Jin-Woo Lee, Yongin, KR;
Moo-Jin Kim, Yongin, KR;
Assignee:
SAMSUNG DISPLAY CO., LTD., Yongin, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/267 (2006.01); H01L 29/66 (2006.01); H01L 29/165 (2006.01); H01L 29/786 (2006.01); H01L 29/778 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/267 (2013.01); H01L 29/1054 (2013.01); H01L 29/165 (2013.01); H01L 29/66045 (2013.01); H01L 29/66431 (2013.01); H01L 29/66742 (2013.01); H01L 29/7781 (2013.01); H01L 29/7782 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01); H01L 29/1606 (2013.01);
Abstract
A transistor, a display device, and associated methods, the transistor including a substrate; an active layer pattern disposed on the substrate, the active layer pattern including silicon and graphene; a gate insulating layer disposed on the active layer pattern; a gate electrode disposed on the gate insulating layer; an insulating interlayer covering the active layer pattern and the gate electrode; and a source electrode and a drain electrode in contact with the active layer pattern.