The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Jan. 17, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventor:
Hisanori Ihara, Seongnam-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14614 (2013.01); H01L 27/1461 (2013.01); H01L 27/14689 (2013.01);
Abstract
A CMOS image sensor has a photodiode including first and second impurity layers sequentially formed on a substrate, an isolation layer on the second impurity layer, and a transfer gate structure through the second impurity layer. The transfer gate structure contacts a top surface of the first impurity layer and a portion of the second impurity layer and includes a bottom surface having a step shape.