The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Mar. 31, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Inventor:
Jae-Hyun Yoo, Suwon-Si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/082 (2006.01); H01L 29/06 (2006.01); H01L 21/331 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 29/866 (2006.01); H01L 29/735 (2006.01); H01L 29/732 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 27/067 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/1004 (2013.01); H01L 29/732 (2013.01); H01L 29/735 (2013.01); H01L 29/866 (2013.01);
Abstract
An electrostatic discharge (ESD) protection circuit includes a substrate, a semiconductor layer provided on the substrate to have a first conductivity type, a first well provided in a first region of the semiconductor layer to have a second conductivity type, an insulating pattern provided in the first well to cross the first well, and first and second doped regions provided in an upper portion of the first well to have the first conductivity type. The first and second doped regions may be laterally spaced apart from each other with the insulating pattern interposed therebetween.