The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2016

Filed:

Feb. 22, 2013
Applicant:

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v., Munich, DE;

Inventors:

Holger Vogt, Muehlheim, DE;

Andreas Goehlich, Rheurdt, DE;

Andreas Jupe, Bochum, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/02 (2006.01); H01L 21/82 (2006.01); B82Y 15/00 (2011.01); H01L 27/146 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); B82Y 15/00 (2013.01); H01L 21/82 (2013.01); B82Y 40/00 (2013.01); H01L 27/14643 (2013.01); H01L 27/14687 (2013.01);
Abstract

Embodiments of the present invention provide a method for manufacturing an integrated sensor structure. In one step, a semiconductor substrate having integrated readout electronics and a metallization structure is provided, the metallization structure including tungsten and being exposed on a surface of the semiconductor substrate. In another step, a sensor layer is deposited onto the surface of the semiconductor substrate, the semiconductor substrate having the integrated readout electronics and the metallization structure being exposed, when depositing the sensor layer, to a temperature which is above a maximum temperature used when generating the integrated readout electronics such that the sensor layer is connected to the integrated readout electronics via the metallization structure.


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