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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9337113 B1

PDFFull Text
Date of Patent:
May. 10, 2016

Filed:

Nov. 20, 2012

Semiconductor device

Applicants:

Rintaro Asai, Toyota, JP;

Atsushi Tanida, Nisshin, JP;

Inventors:

Rintaro Asai, Toyota, JP;

Atsushi Tanida, Nisshin, JP;

Assignee:

TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;

Attorney:

Oliff PLC

Primary Examiner:

Dao H Nguyen

Int. Cl.
CPC ...
H01L 23/02 (2006.01); H01L 23/52 (2006.01); H01L 21/48 (2006.01); H01L 23/10 (2006.01); H01L 23/00 (2006.01); H01L 23/051 (2006.01); H01L 23/433 (2006.01); H01L 23/495 (2006.01); H01L 23/48 (2006.01); H01L 21/52 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/10 (2013.01); H01L 21/52 (2013.01); H01L 23/051 (2013.01); H01L 23/4334 (2013.01); H01L 23/48 (2013.01); H01L 23/49513 (2013.01); H01L 23/49562 (2013.01); H01L 23/49582 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 24/83 (2013.01); H01L 23/3107 (2013.01); H01L 24/48 (2013.01); H01L 2224/29101 (2013.01); H01L 2224/29339 (2013.01); H01L 2224/29355 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/335 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/8382 (2013.01); H01L 2224/83825 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01);
Abstract

A semiconductor device includes a transistor, lead frames, a metal spacer, one surface of which is bonded to the transistor by a first bonding material and the other surface of which is bonded to the lead frame by a second bonding material, and a plastic mold. The plastic mold packages the transistor and the metal spacer. One surface of each of the lead frames is attached to the plastic mold. Strength of the second bonding material is lower than strength of the first bonding material. According to the above configuration, when stress is repeatedly applied to the semiconductor device, a crack occurs earlier in the second bonding material than in the first bonding material. The stress is buffered at the first bonding material.

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