The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
May. 29, 2015
Institute of Microelectroics, Chinese Academy of Sciences, Beijing, CN;
Huaxiang Yin, Beijing, CN;
Changliang Qin, Beijing, CN;
Xiaolong Ma, Beijing, CN;
Guilei Wang, Beijing, CN;
Huilong Zhu, Poughkeepsie, NY (US);
Abstract
A method for manufacturing a semiconductor device comprises, including forming a plurality of fins on a substrate, forming, a dummy gate stack on the fins forming a gate spacer on opposite sides of the dummy gate stack, forming source/drain trenches by etching the fins with the gate spacer and the dummy gate stack as a mask, forming source/drain extension regions on the bottom and sides of the trenches by performing lightly-doping ion implantation; and by performing epitaxial growth in and/or on the source/drain trenches, removing the dummy gate stack to form a gate trench; and forming a gate stack in the gate trench.