The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Jun. 03, 2009
Applicants:
Seung-chul Song, Austin, TX (US);
Beom-mo Han, San Diego, CA (US);
Mohamed Hassan Abu-rahma, San Diego, CA (US);
Inventors:
Seung-Chul Song, Austin, TX (US);
Beom-Mo Han, San Diego, CA (US);
Mohamed Hassan Abu-Rahma, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/77 (2006.01); H01L 21/8234 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); H01L 21/3213 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); H01L 21/32139 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); G03F 7/0002 (2013.01); Y10T 29/41 (2015.01); Y10T 428/24479 (2015.01);
Abstract
An apparatus and method to fabricate an electronic device is disclosed. In a particular embodiment, an apparatus includes a template having an imprint surface. The imprint surface includes a first region having a first pattern adapted to fabricate a fin field effect transistor (FinFET) device and a second region having a second pattern adapted to fabricate a planar electronic device.