The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2016

Filed:

Sep. 11, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Jeffrey P. Gambino, Westford, VT (US);

Qizhi Liu, Lexington, MA (US);

Zhenzhen Ye, South Burlington, VT (US);

Yan Zhang, South Burlington, VT (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 23/367 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 23/367 (2013.01); H01L 2924/0002 (2013.01);
Abstract

According to a structure herein, a silicon substrate has an active device in the silicon substrate. A dielectric film is on the active device. An isolation trench is in the dielectric film surrounding the active device. The trench extends through the dielectric film and at least partially into the silicon substrate. A core is in the isolation trench. The core comprises material having thermal conductivity greater than silicon dioxide and electrical conductivity approximately equal to silicon dioxide.


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