The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2016

Filed:

Dec. 19, 2013
Applicant:

Seiko Instruments Inc., Chiba, JP;

Inventors:

Hitomi Sakurai, Chiba, JP;

Yoshitsugu Hirose, Chiba, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/761 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 21/761 (2013.01); H01L 27/0255 (2013.01); H01L 27/0921 (2013.01);
Abstract

A semiconductor device includes a P-type semiconductor substrate including a pad, a ground pad, and a power supply pad, a first N-type diffusion region formed on the P-type semiconductor substrate and connected to the pad, an internal circuit region formed on the P-type semiconductor substrate, and a minority carrier capture region formed between the first N-type diffusion region and the internal circuit region for capturing minority carriers in the P-type semiconductor substrate caused by a surge to the pad. The minority carrier capture region has a triple guard ring including a first P-type diffusion region, a second P-type diffusion region, and a second N-type diffusion region located between the first P-type diffusion region and the second P-type diffusion region. Each of the first P-type diffusion region and the second P-type diffusion region is connected to the ground pad respectively through metal film wirings that are separately formed.


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