The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2016

Filed:

Oct. 31, 2012
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Abdenacer Ait-Mani, Saint Egreve, FR;

Stephanie Huet, Beaulieu sur Loire, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 25/00 (2006.01); H01L 31/0232 (2014.01); H01L 21/18 (2006.01); H01L 21/683 (2006.01); H01L 21/304 (2006.01); H01L 29/205 (2006.01); H01L 29/225 (2006.01); H01L 27/146 (2006.01); H01L 31/0203 (2014.01); G02B 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/187 (2013.01); H01L 21/02002 (2013.01); H01L 21/304 (2013.01); H01L 21/6835 (2013.01); H01L 29/205 (2013.01); H01L 29/225 (2013.01); G02B 13/0085 (2013.01); H01L 25/00 (2013.01); H01L 27/14618 (2013.01); H01L 31/0203 (2013.01);
Abstract

A method for obtaining a heterogeneous substrate intended for use in the production of a semiconductor comprises the following steps: (a) obtaining a first substrate () made from a type II-VI or type III-V material and a second substrate (), each substrate being substantially planar and each substrate having a pre-determined surface area; (b) grinding a non-through recess () into the second substrate (), the surface area of said recess being greater than the surface area of the first substrate, such that the first substrate can be housed in the recess; (c) depositing a bonding material () in the recess (); (d) depositing the first substrate () in the recess () of the second substrate and securing the first substrate in the second substrate at a temperature below 300° C.; and (e) leveling the first and second substrates in order to obtain a heterogeneous substrate having a substantially planar face ().


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