The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Dec. 20, 2012
Applicants:
Centre National DE LA Recherche Scientifique, Paris, FR;
Universite Joseph Fourier, Grenoble, FR;
Inventors:
Gauthier Chicot, Grenoble, FR;
Aurélien Marechal, St Martin D'heres, FR;
Pierre Muret, Saint Martin D'uriage, FR;
Julien Pernot, Saint Martin D'heres, FR;
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 21/02 (2006.01); H01L 29/51 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 21/044 (2013.01); H01L 21/0231 (2013.01); H01L 21/02178 (2013.01); H01L 21/02271 (2013.01); H01L 21/02312 (2013.01); H01L 29/1602 (2013.01); H01L 29/517 (2013.01); H01L 29/66045 (2013.01); H01L 29/78 (2013.01); H01L 21/0228 (2013.01); H01L 29/495 (2013.01);
Abstract
The invention relates to a method for producing a component comprising a conductive grid insulated from a semiconductor monocrystalline diamond substrate by an insulating region, comprising the following steps: a) oxygenating the surface of the substrate so as to replace the hydrogen surface terminations of the substrate with oxygen surface terminations; and b) forming the insulating region on the surface of the substrate by repeated monatomic layer deposition.