The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2016

Filed:

Jul. 29, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Hyung-Rae Lee, Hwaseong-si, KR;

Yool Kang, Yongin-si, KR;

Seong-Ji Kwon, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/26 (2006.01); H01L 21/027 (2006.01); G03F 7/40 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0273 (2013.01); G03F 7/26 (2013.01); G03F 7/40 (2013.01); H01L 21/3086 (2013.01); H01L 21/31144 (2013.01);
Abstract

A method of forming a pattern of a semiconductor device includes providing a substrate, forming a photoresist layer by coating a resist composition including an acid generator and a first resin, the first resin having an acid-labile group, exposing the photoresist layer, forming a photoresist pattern by negatively developing the photoresist layer using a developing solution including an organic solvent, coating a capping composition including a second resin and the organic solvent on the substrate having the photoresist pattern formed thereon, and attaching a capping layer on upper and side surfaces of the photoresist pattern, by baking the capping composition and developing the capping composition using the developing solution including the organic solvent.


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