The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Apr. 09, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Xianyu Wenxu, Suwon-si, KR;
Yeon-hee Kim, Seoul, KR;
Chang-youl Moon, Suwon-si, KR;
Yong-young Park, Daejeon, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); H01L 21/0243 (2013.01); H01L 21/0245 (2013.01); H01L 21/0262 (2013.01); H01L 21/02164 (2013.01); H01L 21/02238 (2013.01); H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/02491 (2013.01); H01L 21/02502 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02639 (2013.01); H01L 21/02647 (2013.01); H01L 21/02658 (2013.01); H01L 21/02667 (2013.01); H01L 21/3081 (2013.01); H01L 21/30604 (2013.01); H01L 29/2003 (2013.01); H01L 21/02255 (2013.01);
Abstract
A structure includes a silicon substrate, a plurality of silicon rods on the silicon substrate, a silicon layer on the plurality of silicon rods, and a GaN substrate on the silicon layer.